Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles
are influenced by the sputtering. The database for the sputtering has also been developed. We
described a model for the profiles where sputtering phenomenon is included. The model
predicts the profile becomes invariable when the dose exceeds a certain value.
Sputtering, dose loss, backscattering, dose, sublimation energy, reduced
energy, nuclear stopping power, electron stopping power, Gaussian profile, surface,
B, P, As, Si.