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Ion Implantation and Activation
VOLUME: 2
Author(s): Kunihiro Suzuki
eISBN: 978-1-60805-790-0   ISBN: 978-1-60805-791-7   ISSN :2215-0005
Chapter PDF Price: US $ 15
   



Dose Loss

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Author(s): Kunihiro Suzuki
Chapter DOI: 10.2174/9781608057900113020007
Page: 69-77 (9)

Abstract:
Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles are influenced by the sputtering. The database for the sputtering has also been developed. We described a model for the profiles where sputtering phenomenon is included. The model predicts the profile becomes invariable when the dose exceeds a certain value.
Keywords:
Sputtering, dose loss, backscattering, dose, sublimation energy, reduced energy, nuclear stopping power, electron stopping power, Gaussian profile, surface, B, P, As, Si.
Affiliation:
Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.