On Approach to Increase Integration Rate of Field-Effect Transistors by Using Inhomogeneity of Heterostructure and Optimization of Technological Process

Title:On Approach to Increase Integration Rate of Field-Effect Transistors by Using Inhomogeneity of Heterostructure and Optimization of Technological Process

Volume: 6 Issue: 3

Author(s): Evgeny L. Pankratov and Elena A. Bulaeva

Affiliation:

Keywords: Analytical approach to model technological process, field-effect transistors, increase integration rate of transistors, optimization of technological process.

Abstract: In this paper, we model mass and heat transport during manufacturing a field-effect transistor by diffusion or ion implantation in a heterostructure. Based on this modeling we formulate recommendations to optimize annealing of dopant and/or radiation defects to obtain distributions of concentrations of dopants with higher sharpness. The increasing sharpness gives us the possibility to increase integration degree of the field-effect heterotransistor. We also introduce an analytical approach to model redistribution of concentration of dopant and radiation defects and relaxation of spatio-temporal distribution of temperature.

Cite this article as:

L. Pankratov Evgeny and A. Bulaeva Elena, On Approach to Increase Integration Rate of Field-Effect Transistors by Using Inhomogeneity of Heterostructure and Optimization of Technological Process, Micro and Nanosystems 2014; 6 (3) . https://dx.doi.org/10.2174/187640290603150112123156