Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to material synthesis and future nanoscale optoelectronic devices that employ silicon. The recent advances in manipulating patterned silicon nanowire arrays and patents are reviewed with a focus on the progress of nanowire fabrication and applications.
Patterned silicon nanowire arrays, chemical vapor deposition, molecular beam epitaxy, thermal evaporation, selfselective electroless plating, Si solar cells, thermal conductivity, field-effect transistor, Fabrication, axial crystallographic orientation, optoelectronic devices, silicon, photoluminescence, physical va-por deposition, polystyrene spheres, polystyrene monolayer mask, etching techniques, Antireflection Property, Photovoltaic Applica-tion, Raman Spectroscopy, Field Electron Emission Prop-erties
Department of Physics, Southeast University, Nanjing 211189, P. R. China.