Abstract
An analytical model with lateral straggling parameters was developed to describe the tilt dependence of ion-implantation profiles. There are three parameters associated with depth-dependent lateral straggling into the model. On the basis of comparison between experimental and analytical data, a database of ion-implantation profiles that includes lateral-straggling parameters have established. The data with tilt 0° were evaluated using off angle substrates.
Keywords: Ion implantation, lateral straggling, effective gate length, short channel effects, MOSFETs, lateral penetration, lateral resolution, SIMS, tilt, tail function, Pearson function, Gaussian function, joined half Gauss, error function, amorphous layer, channeling.
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