Abstract
Ion implantation profiles are expressed by the Pearson function with first, second, third and fourth moment parameters of Rp , ΔRp , γ , and β. We can derive an analytical model for these profile moments by solving a Lindhard-Scharf-Schiott (LSS) integration equation using perturbation approximation. This analytical model reproduces Monte Carlo data which were well calibrated to reproduce a vast experimental database. The extended LSS theory is vital for instantaneously predicting ion implantation profiles with any combination of incident ions and substrate atoms including their energy dependence.
Keywords: Ion implantation, LSS theory, amorphous, Monte Carlo, nuclear stopping power, electron stopping power, range, projected range, skewness, kurtosis, lateral straggling, Thomas-Fermi potential, ZBL potential, nuclear cross section, electron cross section, cross section.
Related Books
Advanced Materials and Nano Systems: Theory and Experiment - Part 2
Advanced Materials and Nano Systems: Theory and Experiment (Part-1)
The Art of Nanomaterials
Nano Materials Induced Removal of Textile Dyes from Waste Water
Nanobiotechnology: Principles and Applications
Bio-Inspired Nanotechnology
Synthesis of Nanomaterials
Materials Science: A Field of Diverse Industrial Applications
Synthesis and Applications of Semiconductor Nanostructures
Industrial Applications of Polymer Composites