Abstract
We first simplify the existing model for two-dimensional profiles without losing accuracy. Then, a geometrical appreciation is given to the model. Next, a Rp line concept is generated from the simplified model. We can generate three-dimensional ion implantation profiles related to the Rp line for various device structures, and demonstrate that this procedure is applied to three-dimensional ion implantation profiles in FinFET. Furthermore, the models are extended to make Pearson function available.
Keywords: Ion implantation, three-dimensional profile, two-dimensional profile, lateral distribution, Pearson function, Gaussian profile, joined half Gauss, diffusion, device simulator, inverse modeling, diffusion, co-implantation, flash lamp annealing, MOS, Rp line, rotation angle, tilt angle, short channel effect, straggling.
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