A New Paradigm Shift in the Semiconductor Industry for 6G Technology: A Review

Sixth-generation (6G) wireless communication networks are expected to combine terrestrial, maritime, and aerial communications into a scalable, fast, and resilient network that can support a lot of devices with very low latency requirements. 6G semiconductor materials need to have particular properties in order to satisfy the goals of substantially faster data speeds, reduced latency, and enhanced device connection over earlier generations. Novel semiconductor materials are being discovered, and current ones are being optimized to satisfy the ever-changing needs of 6G technology. With an emphasis on wide bandgap semiconductors, like GaN and SiC, which offer improved efficiency and performance, this overview examines significant developments in semiconductor materials. To satisfy the particular requirements of the next-generation wireless networks, the semiconductor industry will probably witness breakthroughs and advances in these and other components as 6G technology develops. It is anticipated that the advancement of 6G technology will present novel demands and obstacles for semiconductor components. For 6G networks, the semiconductor industry is seeing major paradigm developments. In order to support higher frequencies and data rates, this shift places an emphasis on the integration and shrinking of components. For 6G devices to be widely adopted in a sustainable manner, advances in energy efficiency are essential. The 6G network dimensions with air interface and related prospective technologies are thoroughly outlined in this article. With regards to the 6G network, we primarily focus on a variety of semiconductor materials and components, as well as Key Performance Indicators (KPI), like high thermal conductivity, low noise, and wide bandgap.

Keywords: III-V compound semiconductors, 6G technology, Millimeter wave, Semiconductor device, Terahertz frequency.