Thin-Film Transistor Reliability

This chapter introduces the fundamental concepts of thin-film transistors (TFTs), outlining their development, classification, and comparison. It delves into the various applications of TFTs in modern electronics, particularly highlighting their role in active-matrix displays, sensors, and other circuits. The chapter also addresses the reliability of TFT technology, focusing on the degradation processes that occur in different applications and the importance of understanding these for the advancement of electronic devices.

This chapter provides an in-depth analysis of the reliability issues associated with thin-film transistors (TFTs), focusing on the common defects found in silicon-based and metal-oxide TFTs. It discusses the various types of defect states and the typical degradation mechanisms that impact the performance of TFTs. The chapter emphasizes the need for comprehensive understanding and strategies to mitigate these reliability challenges in TFT applications. 

This chapter explores the various methods used for reliability analysis of Thin-Film Transistors (TFTs). It covers transfer curve degradation analysis techniques, capacitance-voltage curve analysis, low-frequency noise analysis, and thin-film quality assessment. Additionally, the chapter discusses simulation analysis methods, including TCAD simulation and thermal simulation, which are crucial for evaluating and enhancing the reliability of TFTs in electronic applications.

This chapter investigates the degradation induced by direct current（DC）voltage stress in thin-film transistors (TFTs). It provides a detailed examination of gate bias stress, hot-carrier effect, and self-heating effect, discussing their impact on silicon-based and metal oxide TFTs. The chapter aims to summarize and analyze the influence of these degradation mechanisms on the performance and reliability of TFT devices.

This chapter investigates the degradation induced by alternating current (AC) voltage stress in thin-film transistors (TFTs). It provides a detailed examination of AC voltage stress, discussing its impact on silicon-based TFTs and metal oxide TFTs. The chapter aims to summarize and analyze the influence of these degradation mechanisms on the performance and reliability of TFT devices.

This chapter discusses the degradation of Thin-Film Transistors (TFTs) under circuit-level stress, which is crucial for understanding their performance and reliability in practical applications. It covers AC degradation under DC bias, bipolar AC degradation, and ultra-fast AC degradation, providing insights into the impact of different stress conditions on the TFTs' performance and reliability. 

This chapter explores the impact of environmental factors on the reliability of thin-film transistors (TFTs), discussing the effects of temperature, illumination, and moisture on the performance and degradation of TFTs. It provides a comprehensive analysis of how these environmental conditions can influence the overall reliability and stability of electronic devices incorporating TFTs. 

This chapter presents strategies for enhancing the reliability of thin-film transistors (TFTs), discussing the implementation of special structures and other improvement methods. This chapter focuses on the reliability improvement of polysilicon TFT in lightly doped drain (LDD) and bridge-grain (BG) structures. The method to improve the reliability of metal oxide TFT is also described, such as the elevated-metal metal oxide (EMMO) structure.